The FDS89161LZ is a dual N-Channel logic level MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device features a maximum on-state resistance (rDS(on)) of 105 mΩ at a gate-source voltage (VGS) of 10 V and 160 mΩ at a VGS of 4.5 V. It is rated for a drain-to-source voltage of 100 V and a continuous drain current of 2.7 A. The process is optimized to provide extremely low on-resistance while maintaining superior switching performance, and a G-S zener is included to enhance ESD protection. Due to its high power and current handling capabilities, it is well-suited for DC-DC conversion applications.