MJD112-1G
onsemiThe MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications. .. see full description
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Products found: 0
Supplier:
onsemi
Part No:
MJD112-1G
RoHS:
No
HTS:
8541290095
COO:
MY
ECCN:
EAR99
Supplier's Standard Package
75
Dimension:
6.73(Max) x 2.38(Max) x 6.35(Max) mm
Family:
MJD112
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
4@40mA@4A V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Saturation Voltage:
2@8mA@2A,3@40mA@4A V
The MJD112-1G is an NPN silicon Darlington power transistor intended for general-purpose power and switching tasks. This device is rated for a collector-emitter voltage of 100 V and a continuous collector current of 2 A, with a peak current rating of 4 A. It features a high DC current gain and can dissipate up to 20 W at a case temperature of 25°C. Housed in a DPAK-3 package with straight leads, it is suitable for use as an output or driver stage in applications such as switching regulators, converters, and power amplifiers.
Search Keywords:
MJD1121G
IN STOCK:
42,150
Ships today, if you order in
Minimum Order Quantity:
75
Multiple:
75
Factory Lead-Time
30 Weeks
Price (USD)
Quantity
Unit Price
Ext. Price
75
$0.8905
$66.7875
300
$0.6224
$186.7200
1,050
$0.5389
$565.8450
2,550
$0.5000
$1,275.0000
5,025
$0.4988
$2,506.4700
7,500
$0.4975
$3,731.2500
10,050
$0.4963
$4,987.8150
15,000
+
$0.4950
$7,425.0000
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