The NVR5198NLT1G is a single N-channel, logic-level power MOSFET designed for switching applications. It features a maximum drain-to-source voltage (VDSS) of 60 V and a low on-resistance (RDS(on)) of 155 mΩ at a 10 V gate drive. The device can handle a continuous drain current of up to 2.2 A at a board temperature of 25°C and has a gate threshold voltage between 1.5 V and 2.5 V. Qualified to AEC-Q101 standards and PPAP capable, this MOSFET is suitable for automotive and other applications requiring high reliability and control, offering improved efficiency in a compact SOT-23 package.