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FDB3632 by onsemi
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FDB3632

onsemi

The FDB3632 is an N-Channel PowerTrench® MOSFET rated for 100 V drain-to-source voltage, 80 A continuous drain current, and 9 mΩ maximum on-resistance. .. see full description

RoHS Non-Compliant
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Products found: 0
Supplier:
onsemi
Part No:
FDB3632
RoHS:
No
HTS:
8541290095
COO:
US
ECCN:
EAR99
Supplier Standard Pack This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
800
The FDB3632 is a 100 V N-Channel PowerTrench® MOSFET designed for high-power switching applications. It features a low on-resistance of 7.5 mΩ (typical) at a 10V gate voltage and a total gate charge of 84 nC, enabling efficient operation. This device also offers a low Miller charge, a low Qrr body diode, and is capable of withstanding Unclamped Inductive Switching (UIS) pulses. Its characteristics make it well-suited for applications such as synchronous rectification, motor drives, uninterruptible power supplies, and micro solar inverters.
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FDB3632
IN STOCK: 4,000
Can Ship immediately
Minimum Order Quantity:
25
Factory Lead-Time
18 Weeks
Price (USD)
Quantity
Unit Price
Ext. Price
25
$2.58
$64.50
100
$1.91
$191.00
250
$1.89
$472.50
800
$1.87
$1,496.00
1,600
$1.86
$2,976.00
3,200
$1.85
$5,920.00
5,600
$1.84
$10,304.00
8,000 +
$1.83
$14,640.00
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