The FDC6327C is a dual N & P-Channel 2.5V specified PowerTrench MOSFET that integrates two complementary transistors in a single package. The N-Channel component is rated for a 20V drain-source voltage and a 2.7A continuous drain current, while the P-Channel is rated for -20V and -1.9A respectively. This device utilizes advanced trench technology to achieve very low on-state resistance, with the N-Channel featuring an RDS(on) of 0.08Ω at VGS = 4.5V and the P-Channel an RDS(on) of 0.17Ω at VGS = -4.5V. Housed in a compact SuperSOT-6 package, the FDC6327C is ideal for space-constrained applications such as DC/DC converters, load switches, and motor driving circuits.