The FDG1024NZ is a dual N-Channel logic level enhancement mode field-effect transistor produced using a high-density DMOS process. It features a low on-state resistance, with a maximum rDS(on) of 175 mΩ at a gate-source voltage of 4.5 V. With a very low gate threshold voltage (VGS(th) < 1 V), the device supports low-level gate drive requirements, enabling operation in 1.5 V circuits. Housed in a very small SC70-6 package, this MOSFET is designed for low-voltage applications as an efficient replacement for bipolar digital transistors and small-signal MOSFETs.