The FDT86106LZ is an N-Channel logic-level PowerTrench® MOSFET produced using an advanced process to minimize on-state resistance while maintaining superior switching performance. It features a maximum rDS(on) of 108 mΩ at a gate-source voltage of 10 V and 153 mΩ at 4.5 V. This device offers high power and current handling capability, is 100% UIL tested, and includes a G-S zener for enhanced ESD protection. Housed in a SOT-223 surface-mount package, the FDT86106LZ is optimized for applications such as DC-DC conversion.