FGH60N60SMD by onsemi
DATA SHEET

FGH60N60SMD

onsemi

The FGH60N60SMD is a 600V, 60A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. .. see full description

RoHS Non-Compliant
Packaging
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Products found: 0
Supplier:
onsemi
Part No:
FGH60N60SMD
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
Supplier's Standard Package The item count, length, weight, or volume contained in the supplier’s original packaging for efficient storage, handling, and distribution.
30
The FGH60N60SMD is a second-generation Field Stop IGBT that offers optimum performance by utilizing novel field stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C. Key features include a high maximum junction temperature of 175°C, a low typical saturation voltage of 1.9V at 60A, and fast switching characteristics which minimize losses. Its positive temperature coefficient allows for easy parallel operation, making it a robust choice for high-power designs. This IGBT is ideal for applications requiring low conduction and switching losses, such as solar inverters, uninterruptible power supplies (UPS), welders, and energy storage systems (ESS).
Search Keywords:
FGH60N60SMD
IN STOCK: 1,950
Can Ship immediately
On Order:
360   can ship 11/23/26 
Minimum Order Quantity:
30
Multiple:
30
Factory Lead-Time
25 Weeks
Price (USD)
Quantity
Unit Price
Ext. Price
30
$4.73
$141.90
60
$4.68
$280.80
120
$3.92
$470.40
270
$3.88
$1,047.60
510
$3.87
$1,973.70
1,020
$3.86
$3,937.20
2,520
$3.85
$9,702.00
5,010 +
$3.84
$19,238.40
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