The MMBFJ108 is an N-Channel JFET switch engineered for digital switching applications where very low on-resistance is a critical requirement. It features a maximum drain-source on-resistance (rDS(on)) of 8.0 Ω and a minimum zero-gate voltage drain current (IDSS) of 80 mA. Key electrical characteristics include a gate-source breakdown voltage of at least -25 V and a gate-source cut-off voltage ranging from -3.0 V to -10.0 V. Housed in a SuperSOT-3 package, its performance makes it well-suited for various low-resistance switching tasks.