The QRD1114 is a reflective object sensor that consists of an infrared emitting diode and an NPN silicon phototransistor mounted side-by-side in a compact black plastic housing. The emitter has a peak emission wavelength of 940 nm, and the sensor features a collector-emitter breakdown voltage of at least 30V. It provides a minimum on-state collector current of 1 mA when a reflective surface is 0.050 inches away, with a typical rise time of 10 µs. Unfocused for sensing diffused surfaces and featuring a daylight filter, the QRD1114 is ideal for applications such as no-contact surface sensing, edge detection, and presence detection.