The OP224 is an 890 nm gallium aluminum arsenide infrared emitting diode (GaAIAs), mounted in a hermetically sealed “pill” package with an enhanced temperature range and a narrow irradiance pattern that provides high on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at equivalent drive currents and have a wavelength that is matched to silicon’s peak response. Their small package size permits high device density mounting.