The 2N7002LT3G is an N-Channel small signal MOSFET designed for low-power switching and amplification applications. It features a drain-source breakdown voltage of 60V and supports a continuous drain current of 115mA. The device is characterized by a low maximum on-state resistance (rDS(on)) of 7.5 Ohms at a 10V gate voltage and a gate threshold voltage ranging from 1.0V to 2.5V. Housed in a compact SOT-23 surface-mount package, this RoHS-compliant component is ideal for space-constrained circuits.