The FDMS86101 is an N-Channel MOSFET produced using an advanced POWERTRENCH® process designed to minimize on-state resistance while maintaining superior switching performance. It features a maximum on-state resistance (rDS(on)) of 8 mΩ at a gate-source voltage (VGS) of 10 V and 13.5 mΩ at a VGS of 6 V. The device is rated for a maximum drain-to-source voltage (VDS) of 100 V and a continuous drain current (ID) of 60 A at a case temperature of 25°C. Housed in a robust, MSL1-rated Power 56 package, this RoHS-compliant MOSFET is 100% UIL tested and optimized for high efficiency in applications such as DC-DC conversion.