The FDB3632 is a 100 V N-Channel PowerTrench® MOSFET designed for high-power switching applications. It features a low on-resistance of 7.5 mΩ (typical) at a 10V gate voltage and a total gate charge of 84 nC, enabling efficient operation. This device also offers a low Miller charge, a low Qrr body diode, and is capable of withstanding Unclamped Inductive Switching (UIS) pulses. Its characteristics make it well-suited for applications such as synchronous rectification, motor drives, uninterruptible power supplies, and micro solar inverters.