The FDB52N20TM is a high-voltage N-Channel UniFET™ MOSFET utilizing planar stripe and DMOS technology. It is tailored to reduce on-state resistance, featuring a maximum RDS(on) of 49 mΩ at a gate-source voltage of 10 V. This device also provides superior switching performance, characterized by a low typical gate charge of 49 nC and a low reverse transfer capacitance (Crss) of 66 pF. Being 100% avalanche tested, this MOSFET is suitable for switching power converter applications such as PDP TV power supplies, lighting, uninterruptible power supplies, and AC-DC power supplies.