The H11G2M is a photodarlington-type optocoupler that integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. This device features a high collector-emitter breakdown voltage of at least 80 V and exhibits high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1 mA. It provides high electrical isolation rated at 4,170 VACRMS for one minute and maintains low leakage current at elevated temperatures. The H11G2M is ideal for applications requiring power supply isolation, telephone ring detection, and interfacing with CMOS or low-input TTL logic.