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MJD112-1G by onsemi
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MJD112-1G

onsemi

The MJD112-1G is an NPN Darlington power transistor designed for general-purpose power and switching applications. .. 查看完整描述

不符合 RoHS 规定
包装
附件
附件
This product is backed by Ecco Electronics' Certificate of Compliance Guarantee. Rest assured you will receive the Manufacturer's Certificate of Compliance with your order. 合规证书保证
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供应商:
onsemi
部件编号:
MJD112-1G
RoHS:
No
HTS:
8541290095
COO:
MY
ECCN:
EAR99
供应商标准包装 此信息提供给偏好按制造商标准包装数量的倍数购买的客户。最小订购数量和要求的订购倍数会与我们的价格和库存信息一起显示。
75
尺寸:
6.73(Max) x 2.38(Max) x 6.35(Max) mm
系列:
MJD112
最大集电极发射极电压:
100 V
最大基极-发射极饱和电压:
4@40mA@4A V
最大集电极基极电压:
100 V
最大集电极-发射极饱和电压:
2@8mA@2A,3@40mA@4A V
The MJD112-1G is an NPN silicon Darlington power transistor intended for general-purpose power and switching tasks. This device is rated for a collector-emitter voltage of 100 V and a continuous collector current of 2 A, with a peak current rating of 4 A. It features a high DC current gain and can dissipate up to 20 W at a case temperature of 25°C. Housed in a DPAK-3 package with straight leads, it is suitable for use as an output or driver stage in applications such as switching regulators, converters, and power amplifiers.
搜索关键词:
MJD1121G
有存货: 42,150
可立即发货
最小订购数量:
75
此消息模板用于通知联盟会员某个订单已付款。当金额被扣款时,订单会获得已付款状态。:
75
工厂交货期
29 周
价格 (USD)
数量
单价
总价
75
$1.0117
$75.8775
300
$0.6615
$198.4500
1,050
$0.5178
$543.6900
2,550
$0.4701
$1,198.7550
5,025
$0.4653
$2,338.1325
7,500
$0.4545
$3,408.7500
10,050
$0.4437
$4,459.1850
15,000 +
$0.4426
$6,639.0000
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