The NDT452AP is a P-Channel enhancement mode power field-effect transistor produced using a high cell density DMOS technology to minimize on-state resistance and provide superior switching performance. It features a drain-source voltage (VDSS) of -30V, a continuous drain current (ID) of -5A, and a low on-state resistance (RDS(ON)) of 0.065 Ω at a gate-source voltage of -10V. The device can handle pulsed drain currents up to -15A and operates over a wide temperature range of -65°C to 150°C. Housed in a SOT-223 surface-mount package, this transistor is particularly suited for low-voltage applications such as notebook computer power management and DC motor control.