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FGH60N60SMD by onsemi
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FGH60N60SMD

onsemi

The FGH60N60SMD is a 600V, 60A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. .. see full description

不符合 RoHS 规定
包装
附件
附件
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Products found: 0
供应商:
onsemi
部件编号:
FGH60N60SMD
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
供应商标准包装 This information is provided for customers who prefer to buy in multiples of the Manufacturer’s Standard Package quantity. Minimum Order Quantities and Required Order Multiples are presented with our price and availability information.
30
The FGH60N60SMD is a second-generation Field Stop IGBT that offers optimum performance by utilizing novel field stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C. Key features include a high maximum junction temperature of 175°C, a low typical saturation voltage of 1.9V at 60A, and fast switching characteristics which minimize losses. Its positive temperature coefficient allows for easy parallel operation, making it a robust choice for high-power designs. This IGBT is ideal for applications requiring low conduction and switching losses, such as solar inverters, uninterruptible power supplies (UPS), welders, and energy storage systems (ESS).
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FGH60N60SMD
有存货: 2,190
Ships today, if you order in
Minimum Order Quantity:
30
Multiple:
30
工厂交货期
13 周
PRICE (USD)
Quantity
Unit Price
Ext. Price
30
$4.13
$123.90
60
$4.12
$247.20
120
$3.42
$410.40
270
$3.39
$915.30
510
$2.91
$1,484.10
1,020
$2.90
$2,958.00
2,520
$2.89
$7,282.80
5,010 +
$2.88
$14,428.80
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