FGH60N60SMD
onsemiThe FGH60N60SMD is a 600V, 60A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. .. see full description
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供应商:
onsemi
部件编号:
FGH60N60SMD
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
供应商标准包装
30
The FGH60N60SMD is a second-generation Field Stop IGBT that offers optimum performance by utilizing novel field stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C. Key features include a high maximum junction temperature of 175°C, a low typical saturation voltage of 1.9V at 60A, and fast switching characteristics which minimize losses. Its positive temperature coefficient allows for easy parallel operation, making it a robust choice for high-power designs. This IGBT is ideal for applications requiring low conduction and switching losses, such as solar inverters, uninterruptible power supplies (UPS), welders, and energy storage systems (ESS).
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FGH60N60SMD
有存货:
2,190
Ships today, if you order in
Minimum Order Quantity:
30
Multiple:
30
工厂交货期
13 周
PRICE (USD)
Quantity
Unit Price
Ext. Price
30
$4.13
$123.90
60
$4.12
$247.20
120
$3.42
$410.40
270
$3.39
$915.30
510
$2.91
$1,484.10
1,020
$2.90
$2,958.00
2,520
$2.89
$7,282.80
5,010
+
$2.88
$14,428.80
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