The APT5015BVRG is a high-voltage N-Channel enhancement mode power MOSFET from the Power MOS V® family. It is engineered with a drain-source voltage of 500V, a continuous drain current of 32A, and a low on-resistance of 0.150 Ω. This technology minimizes the JFET effect and reduces on-resistance, while an optimized gate layout achieves faster switching speeds. The device is 100% avalanche tested and is rated for a single pulse avalanche energy of 1300 mJ. Housed in a TO-247 package, it is ideal for applications like switch-mode power supplies, power factor correction, and motor control.