The 2N7002KT1G is a single N-Channel small signal MOSFET designed for a variety of switching applications. It features a drain-to-source breakdown voltage of 60 V and supports a continuous drain current of up to 380 mA at an ambient temperature of 25°C. The device exhibits a low on-resistance, with a maximum RDS(on) of 1.6 Ω at a 10 V gate-source voltage and 2.5 Ω at 4.5 V. Housed in an ESD-protected SOT-23 package, this MOSFET is well-suited for applications including low-side load switches, level shift circuits, DC-DC converters, and portable electronics.