The FDB2532 is a 150V N-Channel PowerTrench® MOSFET designed for high-power switching applications. It features a very low on-resistance (RDS(on)) of typically 14 mΩ at a 10V gate drive and a low total gate charge (QG(tot)) of 82 nC, which contributes to high efficiency. Key features include low Miller charge, a low Qrr body diode, and Unclamped Inductive Switching (UIS) capability for enhanced ruggedness. These characteristics make the FDB2532 suitable for synchronous rectification, motor drives, battery protection circuits, and uninterruptible power supplies (UPS).