The FDMS86200 is an N-Channel MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This device is optimized for low on-state resistance and superior switching performance, featuring a maximum rDS(on) of 18 mΩ at a gate-source voltage of 10V. It has a maximum drain-to-source voltage rating of 150V and can handle a continuous drain current of up to 35A at a case temperature of 25°C. The combination of an advanced package and silicon results in high efficiency, making it well-suited for DC-DC conversion applications.