The H11G2SR2M is a photodarlington-type optocoupler, which integrates a gallium arsenide infrared emitting diode with a silicon darlington phototransistor. It features a high collector-emitter breakdown voltage of at least 80V and offers high sensitivity with a minimum current transfer ratio (CTR) of 500% at a low input current of 1mA. This device maintains low leakage current, not exceeding 100µA at 60V and an elevated temperature of 80°C, and has a maximum saturation voltage of 1.0V. It is well-suited for applications such as CMOS logic interfacing, telephone ring detection, low input TTL interfacing, and power supply isolation.