MJD44H11T4G
onsemiThe MJD44H11T4G is an NPN silicon power transistor rated for 80V and 8A, designed for general purpose power and switching applications. .. Ver descripción completa
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Proveedor:
onsemi
Nº de pieza:
MJD44H11T4G
RoHS:
No
HTS:
8541290095
COO:
MY
ECCN:
EAR99
Paquete estándar del proveedor
2500
The MJD44H11T4G is an NPN power transistor designed for general-purpose power and switching applications such as output or driver stages. It supports a collector-emitter voltage of 80V and a continuous collector current of 8A. This device features a low collector-emitter saturation voltage of 1.0V maximum at 8A and a minimum DC current gain (hFE) of 40 at a collector current of 4A. With a typical gain-bandwidth product of 50 MHz and fast switching speeds, it is optimized for efficient performance. Housed in a surface-mount DPAK package, the MJD44H11T4G is ideal for use in switching regulators, converters, and power amplifiers.
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MJD44H11T4G
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EN STOCK:
36.900
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Cantidad mínima de pedido:
100
Plazo de entrega de fábrica
12 Semanas
Precio (USD)
Cantidad
Precio por unidad
Precio Ext.
100
$0.4309
$43.0900
500
$0.2764
$138.2000
2.500
$0.2517
$629.2500
5.000
$0.2484
$1,242.0000
7.500
$0.2275
$1,706.2500
25.000
$0.2195
$5,487.5000
50.000
+
$0.2190
$10,950.0000
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