MMBT5088LT1G
onsemiThe MMBT5088LT1G is an NPN silicon transistor designed for low-noise amplification applications. .. Ver descripción completa
Atributo del producto
Valor de atributo
Seleccionar atributo
Productos Encontrados: 0
Proveedor:
onsemi
Nº de pieza:
MMBT5088LT1G
RoHS:
Yes
HTS:
8541210095
COO:
MY
ECCN:
EAR99
Paquete estándar del proveedor
3000
The MMBT5088LT1G is an NPN silicon low noise transistor supplied in a SOT-23 package. It features a collector-emitter breakdown voltage of 30 Vdc and a continuous collector current rating of 50 mAdc. Key performance characteristics include a DC current gain (hFE) between 300 and 900 at 100 µA, a minimum current-gain-bandwidth product of 50 MHz, and a maximum noise figure of 3.0 dB. This Pb-free and RoHS-compliant device is well-suited for use in audio preamplifiers and other sensitive signal processing circuits where low noise is a critical requirement.
Palabras clave de búsqueda:
MMBT5088LT1G
EN STOCK:
0
A la orden:
63.000
puede enviar 9/2/26
123.000
puede enviar 11/22/27
Cantidad mínima de pedido:
3000
Múltiple:
3000
Plazo de entrega de fábrica
79 Semanas
Precio (USD)
Cantidad
Precio por unidad
Precio Ext.
3.000
$0.0296
$88.8000
9.000
$0.0284
$255.6000
27.000
$0.0259
$699.3000
51.000
$0.0253
$1,290.3000
102.000
$0.0252
$2,570.4000
150.000
$0.0252
$3,780.0000
252.000
$0.0251
$6,325.2000
501.000
+
$0.0251
$12,575.1000
Guías de productos
Product Changes
CLIENTELA
TAMBIÉN COMPRADO
BAT54AWT1G
200 mA, 30 V, Dual Common Anode Schottky Diode
SRR4028-101Y
Inductor Power Shielded Wirewound 100uH 30% 100KHz 8.78Q-Factor Ferrite 510mA 600mOhm DCR ...
MCP6001RT-I/OT
Op Amp - Low Power - 1MHz GBP - 1.8 to 6.0 VDC - Rail to Rail I/O - 5-lead SOT-23 - -40°C ...
ERJ-3GEYJ301V
The ERJ-3GEYJ301V is a 300 Ω thick film chip resistor in a 0603 package with a ±5% toleran...
PZTA06
NPN General Purpose Amplifier
English
Chinese
Spanish
