TISP6NTP2CDR-S
BournsThyristor Surge Protection Devices 170V 7A 8-Pin SOIC N T/R .. Ver descripción completa
Atributo del producto
Valor de atributo
Seleccionar atributo
Productos Encontrados: 0
Proveedor:
Bourns
Nº de pieza:
TISP6NTP2CDR-S
RoHS:
Yes
HTS:
8541300040
COO:
GB
ECCN:
EAR99
Paquete estándar del proveedor
2500
Tipo de paquete:
REEL
Dimension:
5(Max) x 4(Max) x 1.55(Max) mm
Maximum Breakover Current:
N/A
Maximum Rate of Rise of Off-State Voltage:
N/A
Maximum Holding Current:
150(Min) mA
Maximum Junction Case Thermal Resistance:
N/A
Maximum Junction Ambient Thermal Resistance:
160 °C/W
Maximum Peak Pulse Current:
90 A
Direction Type:
N/A
Maximum Breakover Voltage:
N/A
Family:
TISP6NTP2C
TISP6NTP2CDR-S is a quad forward-conducting P-gate thyristor designed as a programmable overvoltage protector for high-voltage ringing SLIC (Subscriber Line Interface Circuit) applications. The device provides independent tracking overvoltage protection for two SLIC lines with dual voltage-programmable protectors, supporting battery voltages down to -155 V and featuring a low 5 mA maximum gate triggering current and high 150 mA minimum holding current at 70°C. It is rated for common impulse waveforms including 10/1000 µs (25 A), 10/700 µs (40 A), and 2/10 µs (90 A) peak pulse surge currents, with a specified 2/10 limiting voltage and full operating temperature range of 0°C to 70°C. The device protects against overvoltages caused by lightning, AC power contact, and induction in short loop systems such as WILL, FITL, DAML, SOHO, and ISDN terminal adapters, offering both positive overvoltage clipping via antiparallel diode conduction and negative overvoltage suppression through thyristor regeneration.
Palabras clave de búsqueda:
TISP6NTP2CDRS
EN STOCK:
0
MOQ para cantidad agotada:
500
Plazo de entrega de fábrica
16 Semanas
Precio (USD)
Cantidad
Precio por unidad
Precio Ext.
500
+
$1.65
$825.00
Guías de productos
Product Changes
English
Chinese
Spanish
