The 1N5819G is a 1.0 Ampere Schottky barrier rectifier utilizing a metal-to-silicon power diode design for high efficiency. It is rated for a peak repetitive reverse voltage of 40 V and an average rectified forward current of 1.0 A. Key electrical characteristics include a low maximum forward voltage of 0.6 V at 1.0 A and a maximum instantaneous reverse current of 1.0 mA at 25°C. Due to its low stored charge, majority carrier conduction, and low power loss, this device is ideally suited for use as a rectifier in low-voltage, high-frequency inverters, free-wheeling diodes, and polarity protection applications.