The 2N7002L is an N-Channel small signal MOSFET designed for low-power switching and amplification tasks. This device features a drain-source breakdown voltage of 60 V and a continuous drain current rating of 115 mA at 25°C. Key characteristics include a low static drain-source on-state resistance (rDS(on)) of 7.5 Ω maximum at a 10 V gate voltage and a gate threshold voltage between 1.0 V and 2.5 V. As an AEC-qualified component in a compact SOT-23 package, the 2N7002L is well-suited for automotive systems and other space-constrained applications requiring efficient, low-power switching.