The 2N7002LT1G is an N-Channel small signal MOSFET designed for low-power applications. It features a maximum drain-source voltage of 60V and a continuous drain current rating of 115mA at an ambient temperature of 25°C. Key characteristics include a maximum on-state resistance (rDS(on)) of 7.5 Ω at a 10V gate-source voltage and a gate threshold voltage range of 1.0V to 2.5V. Packaged in a Pb-Free SOT-23, this device is suitable for a variety of general-purpose switching and amplification circuits where space is a constraint.