FDB3632
onsemiThe FDB3632 is an N-Channel PowerTrench® MOSFET rated for 100 V drain-to-source voltage, 80 A continuous drain current, and 9 mΩ maximum on-resistance. .. Ver descripción completa
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Proveedor:
onsemi
Nº de pieza:
FDB3632
RoHS:
No
HTS:
8541290095
COO:
CN
ECCN:
EAR99
Paquete estándar del proveedor
800
The FDB3632 is a 100 V N-Channel PowerTrench® MOSFET designed for high-power switching applications. It features a low on-resistance of 7.5 mΩ (typical) at a 10V gate voltage and a total gate charge of 84 nC, enabling efficient operation. This device also offers a low Miller charge, a low Qrr body diode, and is capable of withstanding Unclamped Inductive Switching (UIS) pulses. Its characteristics make it well-suited for applications such as synchronous rectification, motor drives, uninterruptible power supplies, and micro solar inverters.
Palabras clave de búsqueda:
FDB3632
EN STOCK:
491
Puede enviar inmediatamente
Cantidad mínima de pedido:
25
Plazo de entrega de fábrica
18 Semanas
Precio (USD)
Cantidad
Precio unitario
Precio total
25
$1.77
$44.25
100
$1.63
$163.00
250
$1.56
$390.00
800
$1.52
$1,216.00
1.600
$1.47
$2,352.00
3.200
$1.46
$4,672.00
5.600
$1.45
$8,120.00
8.000
+
$1.44
$11,520.00
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