The FDC5614P is a 60V P-Channel PowerTrench® MOSFET optimized for power management. It features a drain-source voltage of –60V and a continuous drain current of –3A. This device offers a low on-resistance (RDS(ON)) of 0.105 Ω at a gate-source voltage of –10V and 0.135 Ω at –4.5V, which is achieved through high-performance trench technology. With its fast switching speed and low RDS(ON), the FDC5614P is well-suited for applications such as DC-DC converters and load switches.