The FDMS86255 is an N-Channel MOSFET produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. It features a very low maximum on-resistance (rDS(on)) of 12.4 mΩ at VGS = 10 V and 15.5 mΩ at VGS = 6 V, enabled by an advanced package and silicon combination for high efficiency. This device also integrates a next-generation enhanced body diode engineered for soft recovery, housed in an MSL1 robust package design. The FDMS86255 is optimized for applications such as synchronous rectification, DC-DC conversion, and OringFET/load switching.