FGH60N60SMD
onsemiThe FGH60N60SMD is a 600V, 60A Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-current switching applications. .. Ver descripción completa
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Proveedor:
onsemi
Nº de pieza:
FGH60N60SMD
RoHS:
No
HTS:
8541290095
COO:
KR
ECCN:
EAR99
Paquete estándar del proveedor
30
The FGH60N60SMD is a second-generation Field Stop IGBT that offers optimum performance by utilizing novel field stop technology. It is rated for a collector-emitter voltage of 600V and a continuous collector current of 60A at 100°C. Key features include a high maximum junction temperature of 175°C, a low typical saturation voltage of 1.9V at 60A, and fast switching characteristics which minimize losses. Its positive temperature coefficient allows for easy parallel operation, making it a robust choice for high-power designs. This IGBT is ideal for applications requiring low conduction and switching losses, such as solar inverters, uninterruptible power supplies (UPS), welders, and energy storage systems (ESS).
Palabras clave de búsqueda:
FGH60N60SMD
EN STOCK:
2.190
Puede enviar inmediatamente
Cantidad mínima de pedido:
30
Múltiple:
30
Plazo de entrega de fábrica
13 Semanas
Precio (USD)
Cantidad
Precio por unidad
Precio Ext.
30
$4.13
$123.90
60
$4.12
$247.20
120
$3.42
$410.40
270
$3.39
$915.30
510
$2.91
$1,484.10
1.020
$2.90
$2,958.00
2.520
$2.89
$7,282.80
5.010
+
$2.88
$14,428.80
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