The MJD112-1G is an NPN silicon Darlington power transistor intended for general-purpose power and switching tasks. This device is rated for a collector-emitter voltage of 100 V and a continuous collector current of 2 A, with a peak current rating of 4 A. It features a high DC current gain and can dissipate up to 20 W at a case temperature of 25°C. Housed in a DPAK-3 package with straight leads, it is suitable for use as an output or driver stage in applications such as switching regulators, converters, and power amplifiers.