The MMBZ15VALT1G is a dual monolithic silicon Zener diode designed for transient overvoltage protection in voltage and ESD sensitive equipment. This device features a nominal breakdown voltage of 15 V, a working peak reverse voltage of 12 V, and a low reverse leakage current of 50 nA at its working voltage. It provides robust protection with a peak power dissipation rating of 40 W and a maximum clamping voltage of 21 V at a 1.9 A peak pulse current. Housed in a compact SOT-23 package, its dual junction common anode design allows for the protection of two separate lines, making it ideal for space-constrained applications such as computers, printers, communication systems, and medical equipment.