NCV57001FDWR2G
onsemiIsolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation Isolated High Current IGBT Gate Driver
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Productos Encontrados: 0
Proveedor:
onsemi
Nº de pieza:
NCV57001FDWR2G
RoHS:
Yes
HTS:
8542390070
COO:
US
ECCN:
EAR99
Embalaje estándar del proveedor
1000
Isolated high current and high efficiency SiC/MOSFET/IGBT gate driver with internal galvanic isolation Isolated High Current IGBT Gate Driver
Palabras clave de búsqueda:
NCV57001FDWR2G
EN STOCK:
0
MOQ para cantidad agotada:
250
Plazo de entrega de fábrica
32 Semanas
Precio (USD)
Cantidad
Precio unitario
Precio total
250
$5.05
$1,262.50
500
$3.11
$1,555.00
750
$2.46
$1,845.00
1.000
+
$2.41
$2,410.00
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