The NDT456P is a P-Channel enhancement mode power field effect transistor produced using a high cell density DMOS technology for superior switching performance. It is rated for a drain-source voltage of -30V and a continuous drain current of -7.5A. This device features a very low on-state resistance, with an RDS(ON) of 0.030 Ω at VGS = -10V and 0.045 Ω at VGS = -4.5V. Housed in a surface-mount SOT-223 package, it offers high power and current handling capabilities. The NDT456P is particularly suited for low voltage applications such as notebook computer power management, battery-powered circuits, and DC motor control.