The OPS667 is a sensor pair comprising a gallium arsenide infrared emitting diode and a corresponding NPN silicon phototransistor. This device features a minimum on-state collector current of 5.0 mA with a 20 mA forward current. Key electrical characteristics include a collector-emitter breakdown voltage of at least 30 V, a maximum collector-emitter dark current of 100 nA, and a collector-emitter saturation voltage of 0.4 V. Designed for reliability, it operates over a temperature range of -40°C to +100°C. The OPS667 is well-suited for applications such as non-contact reflective object sensing, assembly line automation, machine safety, and end-of-travel sensors.